MMBTSA733 pnp silicon epitaxial planar transistor for switching and af amplifier applications. the transistor is subdivided in to five groups r, o, y, p and l, according to its dc current gain. as complementary type the npn transistor mmbtsc945 is recommended. sot-23 plastic package absolute maximum ratings (t a = 25 o c) symbol value unit collector base voltage -v cbo 60 v collector emitter voltage -v ceo 50 v emitter base voltage -v ebo 5 v collector current -i c 150 ma power dissipation p tot 200 mw junction temperature t j 150 o c storage temperature range t s -55 to +150 o c
MMBTSA733 characteristics at t amb =25 o c symbol min. typ. max. unit dc current gain at -v ce =6v, -i c =1ma current gain group r o y p l h fe h fe h fe h fe h fe 40 70 120 200 350 - - - - - 80 140 240 400 700 - - - - - collector base breakdown voltage at -i c =100a -v (br)cbo 60 - - v collector emitter breakdown voltage at -i c =10ma -v (br)ceo 50 - - v emitter base breakdown voltage at -i e =10a -v (br)ebo 5 - - v collector cutoff current at -v cb =60v -i cbo - - 0.1 a emitter cutoff current at -v eb =5v -i ebo - - 0.1 a collector saturation voltage at -i c =100ma, -i b =10ma -v ce(sat) - - 0.3 v base emitter voltage at -v ce =6v, -i c =1ma -v be(on) 0.5 - 0.8 v gain bandwidth product at -v ce =6v, -i c =10ma f t 50 180 - mhz output capacitance at -v cb =10v, f=1mhz c ob - 2.8 - pf noise figure at -v ce =6v, -i c =0.3ma, f=100hz, r s =10k ? f - 6 20 db
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